| 摘要 |
<p>A polycrystalline silicon sputtering target produced by the melting method, characterized in that the number of nitride or carbide grains having a size of 100 µm or larger which are present in any cut surface of the target is less than 3 on average per 100 mm × 100 mm. Provided is a process for producing the polycrystalline silicon sputtering target, characterized by melting raw-material silicon with electron beams, pouring the molten silicon into a crucible heated to 90°C or higher to form a silicon ingot, and machining the ingot into a target. The inventors directed attention to polycrystalline silicon produced by the melting method, and the contents of silicon nitride and silicon carbide therein are reduced to obtain a good-quality polycrystalline silicon sputtering target and, simultaneously therewith, production steps therefor are devised to provide the polycrystalline silicon sputtering target having high bending strength.</p> |
