发明名称 METAL SUBSTRATE WITH INSULATING LAYER, METHOD FOR PRODUCING THE SAME, AND SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To enable a metal substrate with an insulating layer to maintain good strength and insulation characteristics as a flexible substrate even if the metal substrate has been subjected to a high temperature history of 550°C or higher.SOLUTION: A metal substrate 10 with an insulating layer includes: a steel base 11; and an Al layer 12 provided on at least one surface of the steel base 11, wherein an anodic oxide film 13 having a porous structure is formed, as an electrically insulating layer, on the Al layer 12. The steel base 11 contains 0.0025-0.02 mass% of N.
申请公布号 JP2013151728(A) 申请公布日期 2013.08.08
申请号 JP20120014063 申请日期 2012.01.26
申请人 FUJIFILM CORP 发明人 SATO KEIGO;KAKIUCHI RYOZO;YUYA SHIGENORI
分类号 C25D11/04;H01L31/04 主分类号 C25D11/04
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