| 摘要 |
This invention targets improvement in CMOS sensors using a multiplexed read-out architecture in which pixels are output at the pixel VN level instead of the line/reference amplifier level. The pixel signal voltage VN and offset voltage VNS are read sequentially, eliminating the differential structure. Interference rejection, usually achieved by a differential signal, is obtained by using a CDS (Correlated Double Sampler) in the same way as in the prior art.
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