发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
Provided is a highly reliable semiconductor device which includes a transistor including an oxide semiconductor. The semiconductor device includes an oxide semiconductor layer; a gate insulating layer provided over the oxide semiconductor layer; a gate electrode layer overlapping with the oxide semiconductor layer with the gate insulating layer provided therebetween; an insulating layer being in contact with part of an upper surface of the oxide semiconductor layer, covering a side surface of the gate insulating layer and a side surface and an upper surface of the gate electrode layer, and having a lower oxygen-transmitting property than the gate insulating layer; a sidewall insulating layer provided on the side surface of the gate electrode layer with the insulating layer provided therebetween; a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor layer.
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申请公布号 |
US2013200375(A1) |
申请公布日期 |
2013.08.08 |
申请号 |
US201313755004 |
申请日期 |
2013.01.31 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI |
分类号 |
H01L21/02;H01L29/786 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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