SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

A semiconductor device (100A) has: a substrate (1); a gate electrode (3) and a first transparent electrode (2) which are formed on the substrate (1); a first insulating layer (4) formed on the gate electrode (3) and the first transparent electrode (2); an oxide semiconductor layer (5) formed on the first insulating layer (4); a source electrode (6s) and a drain electrode (6d) which are electrically connected to the oxide semiconductor layer (5); and a second transparent electrode (7) which is electrically connected to the drain electrode (6d). At least part of the first transparent electrode (2) overlaps the second transparent electrode (7) with the first insulating layer (4) interposed therebetween. The oxide semiconductor layer (5) and the second transparent electrode (7) are formed from the same oxide film.