发明名称 |
METHOD FOR FABRICATING SELF-ALIGNED BODY CONTACT FOR AN SEMICONDUCTOR-ON-INSULATOR TRENCH DEVICE |
摘要 |
<p>A structure and method of forming a body contact for a semiconductor-on-insulator trench device. The method including: forming set of mandrels on a top surface of a substrate, each mandrel of the set of mandrels arranged on a different corner of a polygon and extending above the top surface of the substrate, a number of mandrels in the set of mandrels equal to a number of corners of the polygon; forming sidewall spacers on sidewalls of each mandrel of the set of mandrels, sidewalls spacers of each adjacent pair of mandrels merging with each other and forming a unbroken wall defining an opening in an interior region of the polygon, a region of the substrate exposed in the opening; etching a contact trench in the substrate in the opening; and filling the contact trench with an electrically conductive material to form the contact.</p> |
申请公布号 |
EP2008300(B1) |
申请公布日期 |
2013.08.07 |
申请号 |
EP20070758889 |
申请日期 |
2007.03.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DIVAKARUNI, RAMACHANDRA;CHENG, KANGGUO |
分类号 |
H01L21/44;H01L21/00;H01L21/84;H01L27/108;H01L29/78 |
主分类号 |
H01L21/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|