发明名称 |
Integrated circuit and manufacturing method |
摘要 |
<p>Disclosed is an integrated circuit comprising a substrate (10) including at least one light sensor (12); an interconnect structure (20) over the substrate; at least one passivation layer (30) over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor (50) at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer (46') in between a first electrode (42) and a second electrode (44), the gas sensitive layer further comprising a portion (46") over the first area. A method of manufacturing such an IC is also disclosed.</p> |
申请公布号 |
EP2623969(A1) |
申请公布日期 |
2013.08.07 |
申请号 |
EP20120153390 |
申请日期 |
2012.01.31 |
申请人 |
NXP B.V. |
发明人 |
PONOMAREV, YOURI VICTOROVITCH;TIO CASTRO, DAVID;DAAMEN, ROEL |
分类号 |
G01N27/12;G01N27/22 |
主分类号 |
G01N27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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