发明名称 Integrated circuit and manufacturing method
摘要 <p>Disclosed is an integrated circuit comprising a substrate (10) including at least one light sensor (12); an interconnect structure (20) over the substrate; at least one passivation layer (30) over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor (50) at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer (46') in between a first electrode (42) and a second electrode (44), the gas sensitive layer further comprising a portion (46") over the first area. A method of manufacturing such an IC is also disclosed.</p>
申请公布号 EP2623969(A1) 申请公布日期 2013.08.07
申请号 EP20120153390 申请日期 2012.01.31
申请人 NXP B.V. 发明人 PONOMAREV, YOURI VICTOROVITCH;TIO CASTRO, DAVID;DAAMEN, ROEL
分类号 G01N27/12;G01N27/22 主分类号 G01N27/12
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