发明名称
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a quartz top plate for a plasma nitriding device which allows the formation of a high-quality nitride film by preventing splash of quartz fragments. <P>SOLUTION: According to an embodiment of the invention, a quartz top plate for a plasma nitriding device is provided. The quartz top plate for a plasma nitriding device is disposed between an antenna for producing plasma in a vacuum reaction chamber of the plasma nitriding device, and a plasma region in the vacuum reaction chamber, and used as a top plate of the vacuum reaction chamber. The quartz top plate for a plasma nitriding device comprises: a main plate part formed from quartz in a plate-like shape; and a dense film forming, of faces of the main plate part, at least a face in contact with an atmosphere of plasma, and composed of a film denser than the quartz. The dense film is formed by film growth on the main plate part. <P>COPYRIGHT: (C)2012,JPO&INPIT</p>
申请公布号 JP5254385(B2) 申请公布日期 2013.08.07
申请号 JP20110042111 申请日期 2011.02.28
申请人 发明人
分类号 H01L21/31;H05H1/46 主分类号 H01L21/31
代理机构 代理人
主权项
地址
您可能感兴趣的专利