Fabrication method of a self aligned contact in a semiconductor device

摘要

Here discussed is a method of fabricating a self-aligned contact in a semiconductor device which includes etching a trench in a core area and partially extending into a termination area of a substrate. A first oxide is grown on the substrate proximate the trench. A polysilicon layer is deposited in the core area and the termination area. The polysilicon layer is selectively etched to form a gate region in the core area portion of the trench. The etching of the polysilicon layer also forms a first portion of a gate interconnect region in the termination area portion of the trench and a second portion in the termination area outside of the trench. According to this method the gate contact opening is formed together with the body/source contact.