| 摘要 |
A high bright LED comprises a substrate (11), a conductive layer (12), a first semiconductor layer (13), an active layer (14), a second semiconductor layer (15), a first electrode (16), a second electrode (17) and an insulation structure (19). The conductive layer, the first semiconductor layer, the luminous layer and the second semiconductor layer are disposed upwards from an upper solder layer (111) of the substrate in order. The first electrode is electrically connected to the conductive layer. The second electrode penetrates through the conductive layer, the first semiconductor layer and the luminous layer to make the upper solder and the second semiconductor layer electrically connected. The insulation structure (19) comprises at least two passivation layers (190) peripherally wrapping the second electrode. The thicknesses of the at least two passivation layers are conformed to the distributed Bragg reflection technique to make the passivation layers jointly used as a reflector with high reflectance. |
