MAGNETIC MEMORY ELEMENT, METHOD FOR DRIVING THE MAGNETIC MEMORY ELEMENT, AND NONVOLATILE STORAGE DEVICE

摘要

A magnetic memory element (10) is provided with a spin valve structure having a free layer (5), a nonmagnetic layer (4) and a pin layer (3) so as to provide a cross-point type memory. The magnetic memory element is provided with another nonmagnetic layer (6) on one surface of the free layer (5), and furthermore, a magnetic changing layer (7) whose magnetic characteristics change depending on temperature so as to sandwich the nonmagnetic layer (6) with the free layer (5). In the magnetic changing layer, magnetization intensity increases depending on temperature, and the magnetic layer wherein magnetization direction is diagonal to a film surface may be arranged thereon.