发明名称 COMPOSITION FOR BETA-SILICON CARBIDE(β-SiC) MATERIAL HAVING LOW-RESISTIVITY, HIGH THERMAL CONDUCTIVITY, SINTERED BODY AND THE PRODUCING METHOD OF THE SAME
摘要 PURPOSE: A composition of β-phase silicon carbide material having low resistivity and high thermal conductivity is provided to enable the densification of silicon carbide and nitrogen doping with high concentration by using at least two kinds of sintering aids which consist of different cations. CONSTITUTION: A composition of β-phase silicon carbide material having low resistivity and high thermal conductivity consists of β-phase silicon carbide and at least two kinds of sintering aids which consist of different cations. The sintering aid is selected among scandium nitrate, yttrium nitrate, lanthanum nitrate, praseodymium nitrate, neodymium nitrate, samarium nitrate, gadolinium nitrate, dysprosium nitrate, holmium nitrate, lutetium nitrate, and the hydrate. The β-phase silicon carbide is 88.0-99.8 weight%, and the sintering aid is 0.2-12 weight% based on the total weight of the composition.
申请公布号 KR20130087726(A) 申请公布日期 2013.08.07
申请号 KR20120008805 申请日期 2012.01.30
申请人 UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATION. 发明人 KIM, YOUNG WOOK;LIM, KWANG YOUNG
分类号 C04B35/565;C04B35/50;C04B35/58;C04B35/645 主分类号 C04B35/565
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