| 摘要 |
<p>A soft X-ray detection apparatus includes a semiconductor substrate (2). The semiconductor substrate has a plurality of detection units (1) disposed thereon, each including a conversion unit (3) and a circuit unit (4). The conversion unit (3) is formed from, for example, a photodiode. The conversion unit (3) collects electric charge generated upon incidence of a soft X-ray. A first conductive type (e.g., N-channel type) amplifier transistor (6) is disposed in the circuit unit (4). The amplifier transistor (6) serves as an amplifier unit that amplifies and outputs a signal supplied from the conversion unit (3). A first conductive type transistor is not disposed between the conversion units (3) that are immediately adjacent to each other. Alternatively, transistors included in the detection units (1) that are immediately adjacent to each other are disposed so as to be in close proximity to each other.
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