| 摘要 |
PURPOSE: A semiconductor memory device and an operating method thereof are provided to improve operating characteristics by preventing the degradation of characteristics caused by a back pattern dependency. CONSTITUTION: A source voltage is applied to a common source line commonly connected to source select transistors of memory strings, and a precharge voltage is applied to unselected bit lines among bit lines connected to drain select transistors of the memory strings (S301). A read pass voltage is applied to unselected memory cells among memory cells connected between the source select transistor and the drain select transistor (S305). A read voltage is applied to selected memory cells among the memory cells. The voltage or the current of selected bit lines among the bit lines is sensed (S307). [Reference numerals] (AA) Start; (BB) End; (S301) Selected bit lines : discharge, Unselected bit lines : precharge, Common source line : source voltage (>0V); (S305) Selected word lines : read voltage, Unselected word lines : pass voltage (Increase in channel potential of an unselected memory string); (S307) Sense a voltage (or a current) of the selected bit lines; (S309) Output data |
