| 摘要 |
PURPOSE: A manufacturing method of a light emitting diode using an imprint stamp is provided to increase light extraction efficiency by forming a concave-convex pattern on the upper part of an n-type semiconductor layer or a p-type semiconductor layer. CONSTITUTION: An n-type semiconductor layer(105) including a concave-convex pattern is formed on the lower side of an n-electrode(106). An active layer(104) emitting light is formed on the lower side of the n-type semiconductor layer. A p-type semiconductor layer(103) is formed on the lower part of the active layer. A combination metal layer(102) reflecting the light generated in the active layer is formed on the lower part of the p-type semiconductor layer. A substrate or a thin film(101) is formed on the lower part of the combination metal layer. |
