发明名称 LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR AND METHOD FOR FABRICATING THE SAME
摘要 <p>PURPOSE: A touch information detecting method is provided to calculate information on a longitudinal axis, a lateral axis, and an angle for a touched point, thereby tracing various information about the touched point. CONSTITUTION: A logic unit (200) receives measurement values corresponding to nodes, which are defined as rows and columns, from a sensor unit. An index setting unit (210) extracts nodes having more than a threshold value among the measurement values and generates a node group. A longitudinal axis calculator (220) calculates a distance between nodes in the node group and produces longitudinal axis length information using first and second nodes which form both ends of the longitudinal axis and are most distant from each other. An angle calculator (240) calculates angle information for the touched spot based on the calculated longitudinal axis length information. The angle information is produced by the calculation of an arctangent value for a connection line between the first and second nodes. [Reference numerals] (210) Index setting unit; (220) Longitudinal axis calculator; (230) Short axis calculator; (232) Buffer 1; (234) Buffer 2; (240) Angle calculator</p>
申请公布号 KR20130087868(A) 申请公布日期 2013.08.07
申请号 KR20120009092 申请日期 2012.01.30
申请人 MELFAS INC. 发明人 YUN, CHAN HYUCK
分类号 G06F3/03;G06F3/041 主分类号 G06F3/03
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