| 摘要 |
<p>A semiconductor integrated circuit of the invention includes: a clock-signal generation circuit (M21); a signal processing circuit (M23) outputting an intensity signal corresponding to an intensity of an external magnetic field based on a time interval between a first spike-shaped voltage waveform and a second spike-shaped voltage waveform in accordance with a clock signal output from the clock-signal generation circuit (M21), the second spike-shaped voltage waveform being detected subsequent to the first spike-shaped voltage waveform, the second spike-shaped voltage waveform having an inverse sign to that of the first spike voltage waveform; and a clock-signal control circuit (M22) controlling intensity-signal output, which is output from the signal processing circuit, to be stopped in at least a forward outage time and a backward outage time, the forward outage time being previous to an apex point of a triangular wave and having 1 to 5% of a triangular wave period, the backward outage time being subsequent to the apex point of the triangular wave and having 1 to 5% of a triangular wave period.</p> |
