| 摘要 |
<p>PURPOSE: A thin film transistor is provided to reduce the deterioration of a device by forming separated channels for decreasing the operating temperature and power of the device. CONSTITUTION: A gate electrode (120) is formed on one surface of a substrate (110). A gate insulating layer (130) is formed on the upper part of the substrate and covers the gate electrode. A semiconductor layer includes a channel region (140), a source region (150), and a drain region (160). The channel region is formed between the source region and the drain region. The channel region includes channels which are separated from each other. A passivation layer (170) covers a part of the semiconductor layer.</p> |
