发明名称 |
SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME |
摘要 |
A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer. |
申请公布号 |
EP2622644(A1) |
申请公布日期 |
2013.08.07 |
申请号 |
EP20100857922 |
申请日期 |
2010.11.05 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
JIN, YOONSIL;SHIM, GOOHWAN;CHOE, YOUNGHO;PARK, CHANGSEO |
分类号 |
H01L31/0236;H01L31/0216;H01L31/0224;H01L31/068;H01L31/18 |
主分类号 |
H01L31/0236 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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