发明名称 SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME
摘要 A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.
申请公布号 EP2622644(A1) 申请公布日期 2013.08.07
申请号 EP20100857922 申请日期 2010.11.05
申请人 LG ELECTRONICS INC. 发明人 JIN, YOONSIL;SHIM, GOOHWAN;CHOE, YOUNGHO;PARK, CHANGSEO
分类号 H01L31/0236;H01L31/0216;H01L31/0224;H01L31/068;H01L31/18 主分类号 H01L31/0236
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