| 摘要 |
Provided is a device which can be used as a hyper thin film gas sensor that is applicable to the sensing of a hydrogen gas as well as other various types of gases by utilizing a thin film comprising a metal compound formed in hyper thin film platinum grain boundary nanospaces as a sensitive film for the gas sensor and altering the metal composition of platinum and a nono compound, thickness of the film, the occupation ratio and the conditions for formation of the film, and which has high long-term reliability. Specifically, provided is a gas sensor which comprises a substrate, a gate insulating film arranged on the substrate, and a gate electrode arranged on the gate insulating film, wherein the gate electrode comprises a metal oxide mixture film produced by mixing an oxygen-doped amorphous metal that contains oxygen with crystals of an oxide of the metal and a platinum film formed on the metal oxide mixture film, the platinum film is composed of multiple platinum crystal grains and grain boundary regions that are present between the platinum crystal grains, the grain boundary regions are filled with a metal oxide mixture, and each of the platinum crystal grains is surrounded by the metal oxide mixture. |
