| 摘要 |
PURPOSE: A reflective photomask and a method of fabricating the same are provided to minimize a reflectivity of incident extremely ultra-violet (EUV) rays introduced into a trench for preventing generation of undesired reflection rays that travel toward a neighbor shot field adjacent to a target shot field, thereby improving a critical dimension (CD) uniformity of patterns. CONSTITUTION: A reflective photomask comprises a substrate (210); a pattern transfer region (110) including a reflection layer (220) disposed on the substrate for reflecting incident light introduced on the substrate, and absorption layer patterns (240) on the reflection layer in the pattern transfer region for exposing a partial surface of the reflection layer; and a light blocking region (120) including a reflection layer on the substrate, and an absorption layer pattern on the reflection layer in the light blocking region. The reflection layer is removed in a border region (130) between the pattern transfer region and the light blocking region, so that a trench (400) is formed to expose the surface of the substrate. Sidewalls (410L,420L,410R,420R) of the trench have a sloped profile. A method of fabricating a reflective photomask comprises the steps of: forming a reflection layer and an absorption layer on the substrate including the pattern transfer region, the light blocking region, and the border region; forming absorption layer patterns by removing portions of the absorption layer in the pattern transfer region; and forming the trench exposing the substrate in the border region by removing the absorption layer and the reflection layer in the border region. At least one of both sidewalls of the reflection layer exposed by the trench is formed to have a negative sloped profile. |
