Methods for forming a plurality of contact holes in a microelectronic device

摘要

A method including: forming a dielectric layer over a substrate of a microelectronic device; forming a photoresist layer over the dielectric layer; performing a first exposure of the photoresist layer to permit portions of the dielectric layer to be removed at a first plurality of locations; subsequent to performing the first exposure, performing a second exposure of the photoresist layer to permit portions of the dielectric layer to be removed at a second plurality of locations different from the first plurality of locations; removing the portions of the dielectric layer at each of i) the first plurality of locations and ii) the second plurality of locations; and etching the dielectric layer at each of i) the first plurality of locations and ii) the second plurality of locations to respectively form a contact hole at each of the i) the first plurality of locations and ii) the second plurality of locations.