发明名称 |
Method of forming flash memory with ultraviolet treatment |
摘要 |
A methods of forming a flash memory device are provided. The flash memory device comprises a silicon dioxide layer on a substrate and a silicon nitride layer that is formed on the silicon dioxide layer. The properties of the silicon nitride layer can be modified by any of: exposing the silicon nitride layer to ultraviolet radiation, exposing the silicon nitride layer to an electron beam, and by plasma treating the silicon nitride layer. A dielectric material is deposited on the silicon nitride layer and a conductive date is formed over the dielectric material. The flash memory device with modified silicon nitride layer provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.
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申请公布号 |
US8501568(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US20080256173 |
申请日期 |
2008.10.22 |
申请人 |
BALSEANU MIHAELA;ZUBKOV VLADIMIR;XIA LI-QUN;NOORI ATIF;ARGHAVANI REZA;WITTY DEREK R.;AL-BAYATI AMIR;APPLIED MATERIALS, INC. |
发明人 |
BALSEANU MIHAELA;ZUBKOV VLADIMIR;XIA LI-QUN;NOORI ATIF;ARGHAVANI REZA;WITTY DEREK R.;AL-BAYATI AMIR |
分类号 |
H01L21/326;H01L21/00;H01L21/3205;H01L21/4763;H01L21/8238;H01L29/792 |
主分类号 |
H01L21/326 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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