| 摘要 |
PURPOSE: A dithioisoindigo-based polymer is provided to be used in a semiconductor layer for various electronic devices by having high field effect mobility, excellent solubility, and excellent air stability. CONSTITUTION: A dithioisoindigo-based polymer is represented by chemical formula 1. In chemical formula 1, Y is oxygen or N-R5; R5 is hydrogen, alkyl, substituted alkyl, aryl, or substituted aryl; each of R3 and R4 is alkyl, substituted alkyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, halogen, alkoxy, alkylthio, trialkylsilyl, -CN, or -NO2; each of k and m is 0, 1, 2, or 3; Ar is ethenyl, ethynyl, aryl, substituted aryl, heteroaryl, or substituted heteroaryl; x is 0-8; and n, as the number of repeating units, is 2-5,000. |
