| 摘要 |
In a method of making a semiconductor device, a gate dielectric is formed over the semiconductor body. A floating gate is formed over the gate dielectric, an insulating region over the floating gate, and a control gate over the insulating region. The gate dielectric, floating gate, insulating region, and control gate constitute a gate stack. A stress is caused in the gate stack, whereby the band gap of the gate dielectric is changed by the stress.
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