发明名称 |
Semiconductor element, semiconductor device, and method for manufacturing the same |
摘要 |
The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer.
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申请公布号 |
US8501564(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US20100956624 |
申请日期 |
2010.11.30 |
申请人 |
SUZAWA HIDEOMI;KURATA MOTOMU;MIKAMI MAYUMI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SUZAWA HIDEOMI;KURATA MOTOMU;MIKAMI MAYUMI |
分类号 |
H01L21/336;H01L29/788 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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