| 摘要 |
According to embodiments of the present invention, there are provided a thin film transistor, an array substrate and method of manufacturing the same, and a display device. The thin film transistor comprises: a gate electrode, a gate insulating layer, a semiconductor active layer, an etch stop layer, a source electrode and a drain electrode, wherein, the gate insulating layer is interposed between the gate electrode and the semiconductor active layer, the etch stop layer covers the semiconductor active layer, and has a first via hole and a second via hole formed therein which expose a part of the semiconductor active layer, the source electrode of the thin film transistor contacts with the semiconductor active layer through the first via hole, and the drain electrode of the thin film transistor contacts with the semiconductor active layer through the second via hole. |
