发明名称 |
Resistive memory device and manufacturing method thereof and operating method thereof |
摘要 |
A method of manufacturing resistive memory includes the steps: forming a first implanted stacked structure having a first impurity diffusion layer, a second impurity diffusion layer, and a third impurity diffusion layer in a substrate; etching at least the first implanted stacked structure to form a plurality of second implanted stacked structures, wherein the first impurity diffusion layers are first signal lines; forming a plurality of first insulating layers between the second implanted stacked structures; etching the second implanted stacked structures to form a plurality of third implanted stacked structures, wherein the first signal lines are not etched; forming a plurality of second insulating layers between the third implanted stacked structures; forming a plurality of memory material layers electrically coupled to the third impurity diffusion layers; and forming a plurality of second signal lines perpendicular to the first signal lines and electrically coupled to the memory material layers.
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申请公布号 |
US8501574(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US20090574938 |
申请日期 |
2009.10.07 |
申请人 |
CHANG KUO-PIN;LUE HANG-TING;TSAI CHENG-HUNG;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHANG KUO-PIN;LUE HANG-TING;TSAI CHENG-HUNG |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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地址 |
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