发明名称 |
Method for fabricating a recessed channel access transistor device |
摘要 |
A method for fabricating a recessed channel access transistor device is provided. A semiconductor substrate having thereon a recess is provided. A gate dielectric layer is formed in the recess. A gate material layer is then deposited into the recess. A dielectric cap layer is formed on the gate material layer. The dielectric cap layer and the gate material layer are etched to form a gate pattern. A liner layer is then formed on the gate pattern. A spacer is formed on the liner layer on each sidewall of the gate pattern. The liner layer not masked by the spacer is etched to form an undercut recess that exposes a portion of the gate material layer. The spacer is then removed. The exposed portion of the gate material layer in the undercut recess is oxidized to form an insulation block therein.
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申请公布号 |
US8501566(B1) |
申请公布日期 |
2013.08.06 |
申请号 |
US201213609289 |
申请日期 |
2012.09.11 |
申请人 |
CHOU CHUNG-YEN;WU TIEH-CHIANG;HO HSIN-JUNG;NANYA TECHNOLOGY CORP. |
发明人 |
CHOU CHUNG-YEN;WU TIEH-CHIANG;HO HSIN-JUNG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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