发明名称 A LITHOGRAPHY MODEL FOR 3D RESIST PROFILE SIMULATIONS.
摘要 <p>Described herein is a method for simulating a three-dimensional spatial intensity distribution of radiation formed within a resist layer on a substrate resulting from an incident radiation, the method comprising: calculating an incoherent sum of forward propagating radiation in the resist layer and backward propagating radiation in the resist layer; calculating an interference of the forward propagating radiation in the resist layer and the backward propagating radiation in the resist layer; and calculating the three-dimensional spatial intensity distribution of radiation from the incoherent sum and the interference.</p>
申请公布号 NL2010162(A) 申请公布日期 2013.08.06
申请号 NL20132010162 申请日期 2013.01.22
申请人 ASML NETHERLANDS B.V. 发明人 LIU PENG
分类号 G03F7/20 主分类号 G03F7/20
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