发明名称 |
Organic thin film transistors |
摘要 |
A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.
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申请公布号 |
US8502356(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US20110987724 |
申请日期 |
2011.01.10 |
申请人 |
HALLS JONATHAN J.;MURPHY CRAIG EDWARD;WHITING GREGORY;HOTTA SADAYOSHI;CAMBRIDGE DISPLAY TECHNOLOGY LIMITED;PANASONIC CORPORATION |
发明人 |
HALLS JONATHAN J.;MURPHY CRAIG EDWARD;WHITING GREGORY;HOTTA SADAYOSHI |
分类号 |
H01L23/58;H01L29/08;H01L51/00 |
主分类号 |
H01L23/58 |
代理机构 |
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主权项 |
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