| 发明名称 |
Silicon dioxide thin films by ALD |
| 摘要 |
Methods are provided for depositing silicon dioxide containing thin films on a substrate by atomic layer deposition ALD. By using disilane compounds as the silicon source, good deposition rates and uniformity are obtained.
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| 申请公布号 |
US8501637(B2) |
申请公布日期 |
2013.08.06 |
| 申请号 |
US20080340551 |
申请日期 |
2008.12.19 |
| 申请人 |
MATERO RAIJA H.;HAUKKA SUVI P.;ASM INTERNATIONAL N.V. |
发明人 |
MATERO RAIJA H.;HAUKKA SUVI P. |
| 分类号 |
H01L21/26 |
主分类号 |
H01L21/26 |
| 代理机构 |
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