发明名称 Semiconductor device and a method of manufacturing the same
摘要 A semiconductor device featuring a substrate having a first surface defined by a first edge and an opposing second edge, electrode pads formed on the first surface, a first semiconductor chip mounted over the first surface between the first edge and the electrode pads and including first pads each electrically connected to a corresponding electrode pad, a second semiconductor chip stacked over the first semiconductor chip and including second pads each electrically connected to a corresponding electrode pad, a third semiconductor chip mounted over the first surface of the substrate between the second edge and the electrode pads and including third pads each electrically connected to a corresponding electrode pad, in which one electrode pad is electrically connected to one first pad, one second pad and one third pad and another electrode pad is electrically connected to a first pad and a second pad corresponding thereto, via separate bonding wires.
申请公布号 US8502395(B2) 申请公布日期 2013.08.06
申请号 US201213413914 申请日期 2012.03.07
申请人 MASUDA MASACHIKA;USAMI TOSHIHIKO;ELPIDA MEMORY, INC. 发明人 MASUDA MASACHIKA;USAMI TOSHIHIKO
分类号 H01L23/48;H01L25/18;H01L21/60;H01L23/31;H01L25/065;H01L25/07 主分类号 H01L23/48
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