| 摘要 |
According to one embodiment, a resistance change type memory includes a memory cell and a capacitor which are provided on a semiconductor substrate. The memory cell includes a resistance change type memory and a select transistor. The resistance change type storage element changes in resistance value in accordance with data to be stored. The select transistor includes a first semiconductor region provided in the semiconductor substrate, and a gate electrode facing the side surface of the first semiconductor region via a gate insulating film. The capacitor includes a second semiconductor region provided in the semiconductor substrate, a capacitor electrode facing the side surface of the second semiconductor region, and a first capacitor insulating film provided between the second semiconductor region and the capacitor electrode. |
