| 摘要 |
The present invention relates to a thin film transistor. The thin film transistor includes a semiconductor having first, second, third, fourth, and fifth electrode regions arranged in a direction and spaced apart from each other and first, second, third, and fourth offset regions disposed between the first, second, third, fourth, and fifth electrode regions, respectively. An input electrode is connected to the third electrode region, an output electrode is connected to the first and fifth electrode regions, an insulating layer is disposed on the semiconductor, and a control electrode is disposed on the insulating layer and the second and fourth electrode regions. |
