Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.
申请公布号
US8501266(B2)
申请公布日期
2013.08.06
申请号
US20100749048
申请日期
2010.03.29
申请人
WOELK EGBERT;DICARLO, JR. RONALD L.;ROHM AND HAAS ELECTRONICS MATERIALS LLC