发明名称 Method for fabricating deep trench isolation
摘要 The invention provides a method for fabricating a deep trench isolation including: providing a substrate; forming a first trench in the substrate; conformally forming a first liner layer on the sidewall and bottom of the first trench; forming a first filler layer on the first liner layer and filling the first trench; forming an epitaxial layer on the substrate and the first trench; forming a second trench through the epitaxial layer and over the first trench; conformally forming a second liner layer on the sidewall and bottom of the second trench; and forming a second filler layer on the second liner layer and filling the second trench.
申请公布号 US8501565(B2) 申请公布日期 2013.08.06
申请号 US201113181689 申请日期 2011.07.13
申请人 CHIN YU-LUNG;TU SHANG-HUI;LIN SHIN-CHENG;VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION 发明人 CHIN YU-LUNG;TU SHANG-HUI;LIN SHIN-CHENG
分类号 H01L21/336 主分类号 H01L21/336
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