METHOD FOR OPERATING MEMORY CONTROLLER AND MEMORY SYSTEM INCLUDING THE MEMORY CONTROLLER

摘要

PURPOSE: A method of operating a memory controller and a memory system including the memory controller are provided to improve the speed of a read operation and reduce a read failure rate of a non-volatile memory device including a multi-level cell. CONSTITUTION: An error correction code (ECC) is performed for first page data transmitted from a non-volatile memory device and read according to a first read voltage level (S130). A second read voltage level is estimated with regard to the first page data by using metadata of second page data when the first page data includes uncorrectable errors according to the result of performing the ECC (S170).