Semiconductor process and semiconductor structure for memory array with buried digit lines (BDL)

摘要

A semiconductor process for a memory array with buried digit lines is described. A first trench is formed in a semiconductor substrate. A liner layer is formed on the sidewall of the first trench. A second trench is formed in the substrate under the first trench. A mask layer is formed at the bottom of the second trench. An isotropic doping process is performed using the liner layer and the mask layer as a mask to form a digit-side junction only in the substrate at the sidewall of the second trench.