发明名称 Semiconductor structure and method for slimming spacer
摘要 A semiconductor structure including a substrate and a gate structure disposed on the substrate is disclosed. The gate structure includes a gate dielectric layer disposed on the substrate, a gate material layer disposed on the gate dielectric layer and an outer spacer with a rectangular cross section. The top surface of the outer spacer is lower than the top surface of the gate material layer.
申请公布号 US8502288(B2) 申请公布日期 2013.08.06
申请号 US201113078001 申请日期 2011.04.01
申请人 GUO TED MING-LANG;CHIEN CHIN-CHENG;CHAN SHU-YEN;CHOU LING-CHUN;CHANG TSUNG-HUNG;WU CHUN-YUAN;UNITED MICROELECTRONICS CORP. 发明人 GUO TED MING-LANG;CHIEN CHIN-CHENG;CHAN SHU-YEN;CHOU LING-CHUN;CHANG TSUNG-HUNG;WU CHUN-YUAN
分类号 H01L29/76 主分类号 H01L29/76
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