发明名称 |
Semiconductor structure and method for slimming spacer |
摘要 |
A semiconductor structure including a substrate and a gate structure disposed on the substrate is disclosed. The gate structure includes a gate dielectric layer disposed on the substrate, a gate material layer disposed on the gate dielectric layer and an outer spacer with a rectangular cross section. The top surface of the outer spacer is lower than the top surface of the gate material layer.
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申请公布号 |
US8502288(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US201113078001 |
申请日期 |
2011.04.01 |
申请人 |
GUO TED MING-LANG;CHIEN CHIN-CHENG;CHAN SHU-YEN;CHOU LING-CHUN;CHANG TSUNG-HUNG;WU CHUN-YUAN;UNITED MICROELECTRONICS CORP. |
发明人 |
GUO TED MING-LANG;CHIEN CHIN-CHENG;CHAN SHU-YEN;CHOU LING-CHUN;CHANG TSUNG-HUNG;WU CHUN-YUAN |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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