发明名称 UBM etching methods for eliminating undercut
摘要 A method includes forming an under-bump metallurgy (UBM) layer overlying a substrate, and forming a mask overlying the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A laser removal is performed to remove a part of the first portion of the UBM layer and to form an UBM.
申请公布号 US8501613(B2) 申请公布日期 2013.08.06
申请号 US201113178276 申请日期 2011.07.07
申请人 LEI YI-YANG;KUO HUNG-JUI;LIU CHUNG-SHI;LII MIRNG-JI;YU CHEN-HUA;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LEI YI-YANG;KUO HUNG-JUI;LIU CHUNG-SHI;LII MIRNG-JI;YU CHEN-HUA
分类号 H01L21/44 主分类号 H01L21/44
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