发明名称 Light-emitting device and method for manufacturing the same
摘要 An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
申请公布号 US8502225(B2) 申请公布日期 2013.08.06
申请号 US20100871176 申请日期 2010.08.30
申请人 YAMAZAKI SHUNPEI;SAKATA JUNICHIRO;SAKAKURA MASAYUKI;OIKAWA YOSHIAKI;OKAZAKI KENICHI;MARUYAMA HOTAKA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;SAKATA JUNICHIRO;SAKAKURA MASAYUKI;OIKAWA YOSHIAKI;OKAZAKI KENICHI;MARUYAMA HOTAKA
分类号 H01L29/10;H01L31/00 主分类号 H01L29/10
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