| 发明名称 |
Metal-oxide-semiconductor high electron mobility transistors and methods of fabrication |
| 摘要 |
A method of fabricating Group III-V semiconductor metal oxide semiconductor (MOS) and III-V MOS devices are described.
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| 申请公布号 |
US8502272(B2) |
申请公布日期 |
2013.08.06 |
| 申请号 |
US20070749459 |
申请日期 |
2007.05.16 |
| 申请人 |
DUNGAN THOMAS EDWARD;NIKKEL PHILIP GENE;AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
发明人 |
DUNGAN THOMAS EDWARD;NIKKEL PHILIP GENE |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
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