发明名称 |
Method of manufacturing semiconductor device having silicon carbide layers containing phosphorus |
摘要 |
A semiconductor device includes a MOS transistor, a source electrode and a drain electrode on the MOS transistor each include a first carbon doped silicon layer including carbon at a first carbon concentration and phosphorus at a first phosphorus concentration and a second carbon doped silicon layer over the first silicon carbide layer, which includes phosphorus at a second phosphorus concentration higher than the first phosphorus concentration, and which includes carbon at a second carbon concentration less than or equal to the first carbon concentration.
|
申请公布号 |
US8501571(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US201213419713 |
申请日期 |
2012.03.14 |
申请人 |
TAMURA NAOYOSHI;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
TAMURA NAOYOSHI |
分类号 |
H01L21/336;H01L21/00;H01L21/20;H01L21/36;H01L21/8238;H01L27/088;H01L33/00 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|