发明名称 |
Semiconductor device with improved on-resistance |
摘要 |
A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone. |
申请公布号 |
US8502315(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US201213463243 |
申请日期 |
2012.05.03 |
申请人 |
MAUDER ANTON;BERGER RUDOLF;HIRLER FRANZ;SIEMIENIEC RALF;SCHULZE HANS-JOACHIM;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
MAUDER ANTON;BERGER RUDOLF;HIRLER FRANZ;SIEMIENIEC RALF;SCHULZE HANS-JOACHIM |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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