发明名称 |
Method of manufacturing source/drain structures |
摘要 |
An integrated circuit device and method for manufacturing the integrated circuit device provide improved control over a shape of a trench for forming the source and drain features of integrated circuit device, by forming a second doped region in a first doped region and removing the first and the second doped regions by a first and a second wet etching processes.
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申请公布号 |
US8501570(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US20100981610 |
申请日期 |
2010.12.30 |
申请人 |
FANG ZIWEI;XU JEFF J.;HUANG MING-JIE;HUANG YIMIN;WU ZHIQIANG;CAO MIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
FANG ZIWEI;XU JEFF J.;HUANG MING-JIE;HUANG YIMIN;WU ZHIQIANG;CAO MIN |
分类号 |
H01L21/02;H01L21/265;H01L21/306;H01L29/165;H01L29/66;H01L29/78 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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