发明名称 |
Manufacturing method of high voltage device |
摘要 |
The present invention discloses a manufacturing method of a high voltage device. The high voltage device is formed in a first conductive type substrate. The high-voltage device includes: a second conductive type buried layer; a first conductive type high voltage well; and a second conductive type body. The high voltage well is formed by the same step for forming a first conductive type well or a first conductive type channel stop layer of a low voltage device formed in the same substrate. The body is formed by the same step for forming a second conductive type well of the low voltage device.
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申请公布号 |
US8501567(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US201113317568 |
申请日期 |
2011.10.21 |
申请人 |
HUANG TSUNG-YI;WANG YUH-CHYUAN;RICHTEK TECHNOLOGY CORPORATION, R.O.C. |
发明人 |
HUANG TSUNG-YI;WANG YUH-CHYUAN |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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