Optoelectronic semiconductor component with current spreading layer

摘要

An optoelectronic semiconductor component comprising a semiconductor body (10) and a current spreading layer (3) is specified. The current spreading layer (3) is applied to the semiconductor body (10) at least in places. In this case, the current spreading layer (3) contains a metal (1) that forms a transparent electrically conductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from that side of the current spreading layer (3) which faces the semiconductor body (10) toward that side of said current spreading layer which is remote from the semiconductor body (10). A method for producing such a semiconductor component is also disclosed.