| 摘要 |
A quaternary alloy sputtering target composed of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein a composition ratio of the respective elements is represented by a formula of CuxIn1-yGaySea (in the formula, 0.84@x@0.98, 0<y@0.5, a=(1/2)x+3/2), and a structure observed via EPMA is configured only from a Cu(In, Ga)Se2 phase without any heterogenous phase of Cu2Se or Cu(In, Ga)3Se5. Provided is a CIGS quaternary alloy sputtering target which is subject to hardly any abnormal discharge even when sputtered for a long period, which is free of any heterogenous phase of Cu2Se or Cu(In, Ga)3Se5 which causes the deterioration in the conversion efficiency of the film after being sputter-deposited, and which can produce a film having superior in-plane uniformity. Additionally provided is a CIGS quaternary alloy sputtering target having a predetermined bulk resistance and a high density. |
