| 摘要 |
<p>PURPOSE: A phase change random access memory device and a manufacturing method thereof are provided to improve the reliability of the phase change random access memory device by improving an insulation layer corresponding to a bottom electrode and a phase change layer. CONSTITUTION: A semiconductor substrate (210) has a switching device. A bottom electrode (250) is formed on the upper side of the switching device. A phase change layer (260) is formed on the upper side of the bottom electrode. A top electrode (270) is formed on the upper side of the phase change layer. Porous insulation layers (245a,245b) surround the bottom electrode and the phase change layer.</p> |
